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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1381 DESCRIPTION With TO-220F package Complement to type 2SD2079 Low collector saturation voltage High DC current gain APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Fig.1 simplified outline (TO-220F) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -100 -100 -7 -5 -8 -0.5 UNIT V V V A A A Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA ;IB=0 IC=-2.5A; IB=-5mA IC=-5A; IB=-20mA IC=-2.5A; IB=-5mA VCB=-100V; IE=0 VEB=-6V; IC=0 IC=-2.5A ; VCE=-3V IC=-7A ; VCE=-3V 1500 500 MIN -100 2SB1381 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V -1.5 -3.0 -2.5 -100 -2.5 15000 |I V V V A mA Switching times ton ts tf Turn-on time Storage time Fall time ANG CH IN EMIC ES IB1=-IB2=-5mA VCC=-25V ,RL=10| OND TOR UC 0.8 |I 2.5 2.0 |I s |I s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1381 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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